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spec no: dsaf7918 rev no: v.2 date: sep/10/2007 page: 1 of 3 approved: wynec checked: allen liu drawn: w.j.hua e rp: 1101003912 phototransistor part number: WP3DP3C features z mechanically and spectrally matched to the infrared emitting led lamp. z water clear lens. z rohs compliant. description made with npn silicon phototansistor chips. package dimensions notes: 1. all dimensions are in millimeters (inches). 2. tolerance is 0.25(0.01") unless otherwise noted. 3. lead spacing is measured where the leads emerge from the package. 4. specifications are subject to change without notice.
spec no: dsaf7918 rev no: v.2 date: sep/10/2007 page: 2 of 3 approved: wynec checked: allen liu drawn: w.j.hua e rp: 1101003912 electrical / optical characteristics at ta=25c absolute maximum ratings at ta=25c symbol parameter min. typ. max. units test conditions v br ceo collector-to-emitter breakdown voltage 30 v i c =100ua ee=0mw/c O v br eco emitter-to-collector breakdown voltage 5 v i e =100ua ee=0mw/c O v ce (sat) collector-to-emitter saturation voltage 0.8 v i c =2ma ee=20mw/c O i ceo collector dark current 100 na v ce =10v ee=0mw/c O t r rise time (10 to 90 ) 15 us v ce = 5v i c =1ma r l =1000 ? t f fall time (90 to 10 ) 15 us i (on) on state collector current 0.3 0.8 ma v ce = 5v ee=1mw/c O =940nm parameter max.ratings collector-to-emitter voltage 30v emitter-to-collector voltage 5v power dissipation at (or below) 25c free air temperature 100mw operating temperature -40c to +85c storage temperature -40c to +85c lead soldering temperature (>5mm for 5sec) 260c
spec no: dsaf7918 rev no: v.2 date: sep/10/2007 page: 3 of 3 approved: wynec checked: allen liu drawn: w.j.hua e rp: 1101003912 packing & label specifications WP3DP3C

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